Hydrogen in ZnOLAVROV, E. V.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5075-5079, issn 0921-4526, 5 p.Conference Paper

Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25BAGRAEV, Nikolay T; EMTSEV, Vadim V; ESTREICHER, Stefan K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, issn 0921-4526, 777 p.Conference Proceedings

Deep levels investigation of AlGaN/GaN heterostructure transistorsCHIKHAOUI, W; BLUET, J. M; GIRARD, P et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4877-4879, issn 0921-4526, 3 p.Conference Paper

Effects of group-V impurities on the elastic properties of siliconSANTEN, Nicole; VIANDEN, Reiner.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4622-4625, issn 0921-4526, 4 p.Conference Paper

Electron paramagnetic resonance spectroscopy of lithium donors in monoisotopic siliconEZHEVSKII, Alexandr A; SOUKHORUKOV, Andrey V; GUSEINOV, Davud V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5063-5065, issn 0921-4526, 3 p.Conference Paper

First-principles material design and perspective on semiconductor spintronics materialsSATO, K; FUKUSHIMA, T; TOYODA, M et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5237-5243, issn 0921-4526, 7 p.Conference Paper

IR characterization of hydrogen in crystalline silicon solar cellsSTAVOLA, M; KLEEKAJAI, S; WEN, L et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5066-5070, issn 0921-4526, 5 p.Conference Paper

Local cathodoluminescence study of defects in semiconductors and multilayer structuresZAMORYANSKAYA, M. V; DOMRACHEVA, Ya. V; SHAKHMIN, A. A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5042-5044, issn 0921-4526, 3 p.Conference Paper

Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETsCALVET, L. E; MESHKOV, G. A; STRUPIECHONSKI, E et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5136-5139, issn 0921-4526, 4 p.Conference Paper

On diffusion of Cu in ZnOHERKLOTZ, F; LAVROV, E. V; WEBER, J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4807-4809, issn 0921-4526, 3 p.Conference Paper

Optical quenching of photoconductivity in AlxGa1―xN epilayersSEGHIER, D; GISLASON, H. P.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4880-4881, issn 0921-4526, 2 p.Conference Paper

Persistent photoconductivity of ZnOLAIHO, R; STEPANOV, Yu. P; VLASENKO, M. P et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4787-4790, issn 0921-4526, 4 p.Conference Paper

Point defects in ZnO: Electron paramagnetic resonance studyVLASENKO, Leonid S.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4774-4778, issn 0921-4526, 5 p.Conference Paper

Quantum-limit anisotropic magnetoresistance of semiconducting n-BiSb alloysREDKO, N. A; KAGAN, V. D; VOLKOV, M. P et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5196-5199, issn 0921-4526, 4 p.Conference Paper

Ruthenium related deep-level defects in n-type GaAsNAZ, Nazir A; QURASHI, Umar S; MAJID, A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4956-4958, issn 0921-4526, 3 p.Conference Paper

Structural distortions in nitrogen-doped GaP and GaAsPARFENOVA, I. I.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4984-4987, issn 0921-4526, 4 p.Conference Paper

Characterization of II―VI: 3d crystals with the help of ultrasonic techniqueGUDKOV, V. V; LONCHAKOV, A. T; ZHEVSTOVSKIKH, I. V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5244-5246, issn 0921-4526, 3 p.Conference Paper

Control of impurity diffusion in silicon by IR laser excitationSHIRAI, K; MATSUKAWA, K; MORIWAKI, T et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4685-4688, issn 0921-4526, 4 p.Conference Paper

Defects in nanothin crystalline layers and multilayer structures formed of themGONCHAROVA, Olga.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5185-5188, issn 0921-4526, 4 p.Conference Paper

Dislocation photoluminescence in plastically deformed germaniumSHEVCHENKO, S. A; TERESHCHENKO, A. N.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4540-4542, issn 0921-4526, 3 p.Conference Paper

Electronic structure of diluted magnetic semiconductors Pb1―x―ySnxCryTeSKIPETROV, E. P; PICHUGIN, N. A; KOVALEV, B. B et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5255-5258, issn 0921-4526, 4 p.Conference Paper

Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)mLEE, W.-J; RYU, B; CHANG, K. J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4794-4796, issn 0921-4526, 3 p.Conference Paper

Homogenization of CZ Si wafers by Tabula Rasa annealingMEDUNA, M; CAHA, O; KUBENA, J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4637-4640, issn 0921-4526, 4 p.Conference Paper

Imaging charge transport and dislocation networks in ordered GaInPHAEGEL, Nancy M; WILLIAMS, Scott E; FRENZEN, C et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4963-4966, issn 0921-4526, 4 p.Conference Paper

Isotopic effects in photoconductivity spectrum of impurities in siliconANDREEV, Boris A; EZHEVSKII, Alexander A; SENNIKOV, Petr G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5057-5059, issn 0921-4526, 3 p.Conference Paper